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| PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES * * * Super Low Noise Figure & High Associated Gain NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz 6pin super minimold package Gate Width: Wg = 200m ORDERING INFORMATION Part Number NE4210M01-T1 Package 6-pin super minimold Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face to perforation side of the tape V73 Marking ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot Tch Tstg Ratings 4.0 -3.0 IDSS 100 125 125 -65 to +125 Unit V V mA A mW C C The information in this document is subject to change without notice. Document No. P13682EJ1V0DS00 (1st edition) Date Published August 1998 N CP(K) Printed in Japan (c) 1998 NE4210M01 RECOMMENDED OPERATING CONDITION (TA = 25 C) Characteristic Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 +5 Unit V mA dBm ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figuer Symbol IGSO IDSS VGS(off) gm NF Test Conditions VGS = -3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 A VDS = 2 V, ID = 10 mA f = 12 GHz f = 4 GHz Associated Gain Ga f = 12 GHz f = 4 GHz VDS = 2 V ID = 10 mA 9.0 20 -0.2 50 MIN. TYP. 0.5 60 -0.7 65 0.8 0.4 11.0 16.0 dB 1.1 MAX. 10 90 -2.0 Unit A mA V mS dB 2 Preliminary Data Sheet NE4210M01 PACKAGE DIMENSIONS 6 pin super minimold (Unit: mm) -0.1 0.2 -0 -0.1 0.15 -0 1.25 0.1 2.1 0.1 0.1 to 0 to 0.1 0.65 0.65 0.7 0.9 0.1 1.3 2.0 0.2 PIN CONNECTIONS (Top View) (Bottom View) Pin No. 1 Pin Name Gate Source Source Drain Source Source 3 2 1 V73 4 5 6 4 5 6 3 2 1 2 3 4 5 6 Preliminary Data Shee 3 NE4210M01 TYPICAL CHARACTERISTICS (TA = 25 C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 Ptot - Total Power Dissipation - mW 100 80 ID - Drain Current - mA 200 VGS = 0 V 60 -0.2 V 40 -0.4 V 20 -0.6 V 150 100 50 0 50 100 150 200 250 0 1 2 3 4 5 TA - Ambient Temperature - C VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 24 VDS = 2 V ID - Drain Current - mA MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY VDS = 2 V ID = 10 mA 20 MSG. 16 |S21S|2 12 MAG. 60 40 20 0 -2.0 MSG. - Maximum Stable Gain - dB MAG. - Maximum Available Gain - dB |S21s|2 - Forward Insertion Gain - dB -1.0 VGS - Gate to Source Voltage - V 0 8 4 1 2 4 6 8 10 14 20 30 f - Frequency - GHz 4 Preliminary Data Sheet NE4210M01 Gain Calculations MSG. = S21 S12 K= 1 + 2-S112-S222 2 S12S21 MAG. = S21 S12 (K K2 - 1) = S11 * S22 - S21 * S12 NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 20 Ga 2.0 NF - Noise Figure - dB VDS = 2 V ID = 10 mA 16 Ga - Associated Gain - dB 1.5 12 1.0 8 0.5 NF 0 1 4 0 2 4 6 8 10 14 20 30 f - Frequency - GHz Preliminary Data Shee 5 NE4210M01 S-PARAMETER MAG. AND ANG. VDS = 2 V, ID = 10 mA FREQUENCY MHz 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 S11 MAG. .991 .992 .991 .948 .926 .893 .859 .829 .798 .769 .738 .679 .667 .641 .615 .584 .553 .530 .507 .484 .482 .487 .536 .562 .617 .604 .602 .625 .647 .667 .683 .714 .739 .765 .788 .808 ANG. (deg.) -10.4 -20.7 -31.0 -42.3 -53.4 -64.5 -74.8 -85.0 -93.5 -102.4 -111.5 -116.9 -130.4 -144.4 -158.6 -173.6 172.1 157.4 142.4 126.9 110.3 92.5 73.8 52.8 37.3 21.9 14.7 4.6 -5.6 -15.3 -23.9 -32.6 -41.9 -48.5 -56.1 -62.6 MAG. 4.511 4.520 4.523 4.439 4.392 4.318 4.215 4.104 3.997 3.926 3.876 3.847 3.845 3.817 3.831 3.776 3.692 3.603 3.510 3.408 3.270 3.176 3.109 3.085 2.994 2.744 2.534 2.361 2.208 2.034 1.926 1.808 1.649 1.535 1.372 1.177 S21 ANG. (deg.) 169.7 159.7 149.2 136.4 125.5 114.5 104.1 94.2 84.9 75.7 66.5 59.7 49.0 38.5 27.2 16.0 5.0 -5.8 -16.9 -28.0 -38.7 -49.0 -59.7 -70.0 -83.7 -95.6 -106.8 -117.9 -128.8 -138.9 -148.4 -160.0 -170.7 178.1 165.7 155.3 MAG. .011 .021 .032 .041 .050 .058 .064 .070 .074 .078 .082 .085 .091 .094 .099 .102 .103 .103 .103 .103 .103 .101 .100 .102 .101 .096 .090 .085 .087 .085 .080 .076 .079 .075 .078 .069 S12 ANG. (deg.) 85.4 74.5 69.3 58.9 51.3 42.9 36.5 29.0 22.1 15.9 9.3 5.7 -1.8 -8.6 -16.7 -25.4 -33.8 -40.5 -48.3 -56.2 -64.0 -72.2 -78.2 -86.5 -97.5 -106.1 -114.9 -121.8 -129.4 -139.0 -148.7 -153.4 -161.1 -170.4 179.9 173.2 MAG. .657 .652 .648 .610 .592 .565 .545 .524 .507 .493 .472 .458 .415 .373 .349 .312 .270 .235 .209 .171 .139 .142 .164 .173 .173 .186 .240 .299 .342 .373 .391 .435 .471 .509 .552 .580 S22 ANG. (deg.) -8.4 -16.9 -25.2 -31.8 -40.6 -49.3 -57.0 -64.6 -71.7 -78.5 -85.2 -87.3 -95.9 -105.7 -115.0 -126.4 -139.3 -152.6 -165.6 177.0 160.7 133.6 114.7 103.7 81.1 44.2 18.9 11.5 7.0 -0.1 -5.5 -8.3 -15.9 -25.0 -35.3 -46.4 6 Preliminary Data Sheet NE4210M01 AMP. PARAMETERS VDS = 2 V, ID = 10 mA FREQUENCY MHz 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 GUmax dB 33.06 33.41 33.04 24.87 23.16 21.30 19.84 18.70 17.73 16.98 16.28 15.40 15.07 14.59 14.29 13.80 13.26 12.81 12.39 11.94 11.53 11.30 11.44 11.56 11.74 10.90 10.29 10.02 9.78 9.37 9.14 9.15 8.86 8.85 8.54 7.78 14.49 13.55 12.77 12.18 11.92 12.24 12.49 12.86 11.29 10.44 10.15 9.97 9.60 9.43 9.57 9.44 9.67 9.84 8.72 GAmax dB |S21|2 dB 13.09 13.10 13.11 12.95 12.85 12.71 12.50 12.26 12.03 11.88 11.77 11.70 11.70 11.63 11.67 11.54 11.35 11.13 10.91 10.65 10.29 10.04 9.85 9.79 9.53 8.77 8.08 7.46 6.88 6.17 5.70 5.14 4.35 3.72 2.75 1.42 |S12|2 dB -39.20 -33.38 -30.02 -27.78 -26.03 -24.80 -23.86 -23.15 -22.64 -22.20 -21.70 -21.36 -20.80 -20.51 -20.09 -19.83 -19.72 -19.77 -19.75 -19.73 -19.76 -19.94 -19.96 -19.83 -19.96 -20.34 -20.92 -21.39 -21.24 -21.43 -21.90 -22.40 -22.09 -22.44 -22.19 -23.28 .08 .08 .05 .27 .31 .39 .46 .52 .59 .64 .70 .82 .81 .84 .86 .90 .96 1.02 1.08 1.16 1.22 1.26 1.19 1.15 1.10 1.30 1.47 1.52 1.48 1.50 1.55 1.50 1.40 1.32 1.19 1.37 K Delay ns .056 .056 .058 .071 .060 .061 .057 .055 .052 .051 .051 .038 .059 .058 .063 .062 .061 .060 .062 .062 .059 .057 .060 .057 .076 .066 .062 .061 .060 .056 .053 .065 .059 .062 .069 .058 29.694 30.116 26.913 26.284 24.591 23.052 22.477 21.636 19.846 20.495 20.840 21.341 20.755 19.703 19.158 18.458 17.507 16.739 16.388 17.722 18.798 20.502 16.279 14.380 13.882 13.926 13.389 13.022 13.301 13.591 14.276 15.550 12.630 Mason's U dB G1 dB 17.52 17.91 17.57 9.91 8.43 6.93 5.82 5.04 4.41 3.89 3.42 2.68 2.55 2.30 2.06 1.81 1.59 1.43 1.29 1.16 1.15 1.18 1.47 1.65 2.08 1.98 1.95 2.16 2.36 2.55 2.73 3.09 3.43 3.82 4.22 4.58 G2 dB 2.46 2.40 2.36 2.02 1.88 1.67 1.53 1.40 1.29 1.21 1.10 1.02 .82 .65 .56 .45 .33 .25 .19 .13 .09 .09 .12 .13 .13 .15 .26 .41 .54 .65 .72 .91 1.09 1.30 1.58 1.78 Preliminary Data Shee 7 NE4210M01 NOISE PARAMETER VDS = 2 V, ID = 10 mA opt. Freq. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 NFmin. (dB) 0.38 0.39 0.47 0.56 0.66 0.80 0.94 1.19 1.48 Ga (dB) MAG. 18.2 16.3 14.6 13.5 12.3 11.0 10.0 9.2 8.0 0.82 0.64 0.48 0.38 0.25 0.24 0.42 0.58 0.66 ANG. (deg.) 37 67 101 142 -167 -92 -12 30 66 0.36 0.26 0.17 0.09 0.09 0.15 0.39 0.71 1.18 Rn/50 8 Preliminary Data Sheet NE4210M01 RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Recommended Condtion Symbol IR30-00-2 Soldering Metod Infrared Reflow Soldering Conditions Package peak temperature: 230 C or below Time: 30 seconds or less (at 210 C) Count: 2, Exposure limitNote: None VPS Package peak temperature: 215 C or below Time: 40 seconds or less (at 200 C) Count: 2, Exposure limitNote: None VP15-00-2 Wave Soldering Soldering bath temperature: 260 C or below Time: 10 seconds or less Count: 1, Exposure limitNote: None WS60-00-1 Partial Heating Pin temperature: 230 C Time: 10 seconds or less (per pin row) Exposure limit Note - : None Note After opening the dry pack, keep it in a place below 25 C and 65 % RH for the allowable storage period. Do not use different soldering methods together (except for partial heating). Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. Caution PRECAUTION For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (C10535E). Preliminary Data Shee 9 NE4210M01 [MEMO] 10 Preliminary Data Sheet NE4210M01 [MEMO] Preliminary Data Shee 11 NE4210M01 CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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